Datasheet Details
| Part number | FB180SA10 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 137.03 KB |
| Description | Power MOSFET |
| Datasheet |
 FB180SA10 Datasheet
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| Part number | FB180SA10 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 137.03 KB |
| Description | Power MOSFET |
| Datasheet |
FB180SA10 Datasheet
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Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts.
The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry.
PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V RDS(on) = 0.
| Part Number | Description |
|---|---|
| FB11N50A | IRFB11N50A |